auirf7805q www.irf.com 1 08/24/11 so-8 gds gate drain source
advanced planar technology low on-resistance logic level n channel mosfet surface mount available in tape & reel 150c operating temperature automotive [q101] qualified lead-free , rohs compliant specifically designed for automotive applications, these hexfet ? power mosfet's in a dual so-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. additional features of these automotive qualified hexfet power mosfet's are a 150c junction operating temperature, fast switching speed and improved repetitive avalanche rating. these benefits combine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications. the efficient so-8 package provides enhanced thermal characteristics and dual mosfet die capability making it ideal in a variety of power applications. this dual, surface mount so-8 can dramatically reduce board space and is also available in tape & reel. absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ v (br)dss 30v r ds(on) typ. 9.2m max. 11m i d 13a features top view 8 1 2 3 4 5 6 7 d d d d g s a s s a pd ? 96367b parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t a = 25c power dissipation w p d @t a = 70c power dissipation linear derating factor w/c t j operating junction and c t stg storage temperature range thermal resistance parameter typ. max. units r jl junction-to-drain lead ??? 20 c/w r ja junction-to-ambient ??? 50 -55 to + 150 2.5 0.02 1.6 max. 13 10 100 12 30
www.irf.com 2 auirf7805q notes: repetitive rating; pulse width limited by max. junction temperature. pulse width 300 s; duty cycle 2%. when mounted on 1 inch square copper board, t < 10 sec. typ = measured - q oss r is measured at t j of approximately 90c. devices are 100% tested to these parameters. static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 ??? ??? v r ds(on) static drain-to-source on-resistance ??? 9.2 11 m v gs(th) gate threshold voltage 1.0 ??? 3.0 v i dss drain-to-source leakage current ??? ??? 70 ??? ??? 10 ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) q g total gate charge ??? 22 31 q gs1 pre-vth gate-to-source charge ??? 3.7 ??? q gs2 post-vth gate-to-source charge ??? 1.4 ??? q gd gate-to-drain charge ??? 6.8 ??? q sw switch charge (q gs2 + q gd ) ??? 8.2 11.5 q oss output charge ??? 3.0 3.6 nc r g gate resistance 0.5 ??? 1.7 t d(on) turn-on delay time ??? 16 ??? t r rise time ??? 20 ??? t d(off) turn-off delay time ??? 38 ??? t f fall time ??? 16 ??? diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.2 v q rr reverse recovery charge q rr(s) reverse recovery charge (with parallel schottky) 55 2.5 ns nc ??? ??? ??? 106 ??? ??? ??? 88 a nc ns a na ??? ??? v ds = 16v, v gs = 0v, i s = 7.0a v ds = 16v, v gs = 0v, i s = 7.0a di/dt = 700a/ s di/dt = 700a/ s (with 10bq040) t j = 25c, i s = 7.0a, v gs = 0v showing the integral reverse p-n junction diode. i d = 7.0a v ds = v gs , i d = 250 a r g = 2 i d = 7.0a conditions resistive load conditions v gs = 0v, i d = 250 a v gs = 4.5v, i d = 7.0a v ds = 16v v gs = 12v v gs = -12v v gs = 5.0v v ds = 30v, v gs = 0v
www.irf.com 3 auirf7805q qualification information ? so-8 msl1 qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5(+/- 2000v ) ??? (per aec-q101-005) moisture sensitivity level rohs compliant yes esd machine model class m3(+/- 300v ) ??? (per aec-q101-002) human body model class h1b(+/- 1000v ) ??? (per aec-q101-001) ? qualification standards can be found at international rectifier?s web site: http//www.irf.com/ ?? exceptions (if any) to aec-q101 requirements are noted in the qualification report. ??? highest passing voltage
www.irf.com 4 auirf7805q fig 3. typical rds(on) vs. gate-to-source voltage fig 2. typical gate charge vs. gate-to-source voltage fig 1. normalized on-resistance vs. temperature typical characteristics 0.1 1 10 0.4 0.5 0.6 0.7 0.8 0.9 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j fig 4. typical source-drain diode forward voltage 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) figure 5. maximum effective transient thermal impedance, junction-to-ambient
www.irf.com 5 auirf7805q so-8 package outline dimensions are shown in millimeters (inches) so-8 part marking e1 d e y b a a1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l i ne conf or ms t o j e de c ou t l i ne ms - 012 aa. not e s : 1. dimens ioning & tolerancing per asme y14.5m-1994. 2. cont rol l ing dime ns ion: mil l ime t e r 3. dime ns ions are s hown in mil l ime t e rs [inche s ]. 5 dime ns ion doe s not incl u de mol d pr ot ru s ions . 6 dime ns ion doe s not incl u de mol d pr ot ru s ions . mold protrus ions not to exceed 0.25 [.010]. 7 dimens ion is t he lengt h of lead for soldering to a s ubst rat e. mold protrus ions not to exceed 0.15 [.006]. 8x 1.78 [.070] note: for the most current drawing please refer to ir website at http://www.irf.com/package/
www.irf.com 6 auirf7805q 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel dimensions are shown in millimeters (inches)
www.irf.com 7 auirf7805q ordering information base part package type standard pack complete part number form quantity auirf7805q so-8 tube 95 auirf7805q tape and reel 4000 AUIRF7805QTR
www.irf.com 8 auirf7805q
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